The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2014

Filed:

Jun. 28, 2011
Applicants:

Wen-han Wang, Hsin-Chu, TW;

Chen-chih Wu, Hsin-Chu, TW;

Sheng-fang Cheng, New Taipei, TW;

Kuo-ji Chen, Wu-Ku, TW;

Inventors:

Wen-Han Wang, Hsin-Chu, TW;

Chen-Chih Wu, Hsin-Chu, TW;

Sheng-Fang Cheng, New Taipei, TW;

Kuo-Ji Chen, Wu-Ku, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A device includes a metal-oxide-semiconductor (MOS) device, which includes a gate electrode and a source/drain region adjacent the gate electrode. A first and a second contact plug are formed directly over and electrically connected to two portions of a same MOS component, wherein the same MOS component is one of the gate electrode and the source/drain region. The same MOS component is configured to be used as a resistor that is connected between the first and the second contact plugs.


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