The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
May. 17, 2006
Te-sheng Chao, Hsinchu, TW;
Wen-han Wang, Hsinchu, TW;
Min-hung Lee, Hsinchu, TW;
Hong-hui Hsu, Hsinchu, TW;
Chien-min Lee, Hsinchu, TW;
Yen Chuo, Hsinchu, TW;
Yi-chan Chen, Hsinchu, TW;
Wei-su Chen, Hsinchu, TW;
Te-Sheng Chao, Hsinchu, TW;
Wen-Han Wang, Hsinchu, TW;
Min-Hung Lee, Hsinchu, TW;
Hong-Hui Hsu, Hsinchu, TW;
Chien-Min Lee, Hsinchu, TW;
Yen Chuo, Hsinchu, TW;
Yi-Chan Chen, Hsinchu, TW;
Wei-Su Chen, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.