Introduction: Tzung-Yu Hung, a prolific inventor based in Tainan Hsien, Taiwan, has made significant contributions to the field of semiconductor technology. With a total of 13 patents to his name, his work has advanced the methods used in semiconductor fabrication and material processing.

Latest Patents: Among his latest innovations is a patent titled "Method of Removing Material Layer and Remnant Metal." This method outlines a process for removing a remnant material layer from the surface of a semiconductor substrate. The substrate is fixed on a rotating platform, where an etching solution is sprayed from both the center and the side regions, enhancing the etching uniformity of the substrate. Another notable patent is the "Method for Fabricating Semiconductor MOS Device." It details a procedure for making a transistor with silicided source and drain, involving various implantation and annealing processes to repair defects, ultimately leading to the formation of a metal silicide layer.

Career Highlights: Tzung-Yu Hung is affiliated with United Microelectronics Corporation, a prominent player in the semiconductor industry. His career is marked by innovative research and development efforts that have improved manufacturing processes and device performance.

Collaborations: Throughout his career, Tzung-Yu Hung has had the opportunity to collaborate with notable colleagues such as Chao-Ching Hsieh and Yu-Lan Chang. These partnerships have enabled him to refine his methods and expand the impact of his inventions within the industry.

Conclusion: Tzung-Yu Hung is a distinguished inventor whose work continues to shape the semiconductor industry. His innovative methods and dedication to advancing technology underline the importance of research and development in creating efficient and effective manufacturing processes in the field. As he continues to innovate, Tzung-Yu Hung's contributions will undoubtedly resonate within the technology community for years to come.

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