The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Mar. 13, 2007
Yi-wei Chen, Tai-Chung Hsien, TW;
Chao-ching Hsieh, Hsin-Chu Hsien, TW;
Yi-yiing Chiang, Taipei, TW;
Tzung-yu Hung, Tainan Hsien, TW;
Yu-lan Chang, Kao-Hsiung, TW;
Po-chao Tsao, Taipei Hsien, TW;
Chang-chi Huang, Miao- Li Hsien, TW;
Ming-tsung Chen, Hsin-Chu Hsien, TW;
Yi-Wei Chen, Tai-Chung Hsien, TW;
Chao-Ching Hsieh, Hsin-Chu Hsien, TW;
Yi-Yiing Chiang, Taipei, TW;
Tzung-Yu Hung, Tainan Hsien, TW;
Yu-Lan Chang, Kao-Hsiung, TW;
Po-Chao Tsao, Taipei Hsien, TW;
Chang-Chi Huang, Miao- Li Hsien, TW;
Ming-Tsung Chen, Hsin-Chu Hsien, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is performed to react the nickel layer with the doped regions disposed there under. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 and 600° C.