The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Jun. 15, 2005
Yu-lan Chang, Kaohsiung, TW;
Chao-ching Hsieh, Hsinchu Hsien, TW;
Yi-yiing Chiang, Taipei, TW;
Yi-wei Chen, Taichung County, TW;
Tzung-yu Hung, Tainan County, TW;
Yu-Lan Chang, Kaohsiung, TW;
Chao-Ching Hsieh, Hsinchu Hsien, TW;
Yi-Yiing Chiang, Taipei, TW;
Yi-Wei Chen, Taichung County, TW;
Tzung-Yu Hung, Tainan County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer.