The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Feb. 09, 2007
Tzung-yu Hung, Tainan County, TW;
Chun-chieh Chang, Tainan County, TW;
Chao-ching Hsieh, Hsinchu County, TW;
Yu-lan Chang, Kaohsiung, TW;
Yi-wei Chen, Taichung County, TW;
Tzung-Yu Hung, Tainan County, TW;
Chun-Chieh Chang, Tainan County, TW;
Chao-Ching Hsieh, Hsinchu County, TW;
Yu-Lan Chang, Kaohsiung, TW;
Yi-Wei Chen, Taichung County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
The invention provides a method for forming a metal silicide layer. The method comprises steps of providing a substrate and forming a nickel-noble metal layer over the substrate. A grain boundary sealing layer is formed on the nickel-noble metal layer and then an oxygen diffusion barrier layer is formed on the grain boundary sealing layer. Thereafter, a rapid thermal process is performed to transform a portion of the nickel-noble metal layer into a metal silicide layer. Finally, the oxygen diffusion barrier layer, the grain boundary sealing layer and the rest portion of the nickel-noble metal layer are removed.