The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2007
Filed:
Jan. 11, 2005
Yi-wei Chen, Dajia Township, Taichung County, TW;
Tzung-yu Hung, Sinshih Township, Tainan County, TW;
Yi-yiing Chiang, Taipei, TW;
Chao-ching Hsieh, Hsinchu Hsien, TW;
Yu-lan Chang, Kaohsiung, TW;
Yi-Wei Chen, Dajia Township, Taichung County, TW;
Tzung-Yu Hung, Sinshih Township, Tainan County, TW;
Yi-Yiing Chiang, Taipei, TW;
Chao-Ching Hsieh, Hsinchu Hsien, TW;
Yu-Lan Chang, Kaohsiung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a metal silicide layer over a substrate is provided. First, a hard mask layer is formed over a gate formed on a substrate and a portion of the substrate is exposed. Thereafter, a first metal silicide layer, which is a cobalt silicide or a titanium silicide layer, is formed on the exposed substrate. After that, the hard mask layer is removed and a second metal silicide layer is formed over the gate, wherein a material of the second metal silicide layer is selected from a group consisting of nickel silicide, platinum silicide, palladium silicide and nickel alloy. Since different metal silicide layers are formed on the substrate and the gate, the problem of having a high resistance in lines with a narrow line width and the problem of nickel silicide forming spikes and pipelines in the source region and the drain region are improved.