The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Apr. 10, 2007
Yi-wei Chen, Tai-Chung Hsien, TW;
Chun-chieh Chang, Tainan County, TW;
Tzung-yu Hung, Tainan Hsien, TW;
Yu-lan Chang, Kao-Hsiung, TW;
Chao-ching Hsieh, Tai-Nan, TW;
Yi-Wei Chen, Tai-Chung Hsien, TW;
Chun-Chieh Chang, Tainan County, TW;
Tzung-Yu Hung, Tainan Hsien, TW;
Yu-Lan Chang, Kao-Hsiung, TW;
Chao-Ching Hsieh, Tai-Nan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of removing material layer is disclosed. First, a semiconductor substrate is fixed on a rotating platform, where a remnant material layer is included on the surface of the semiconductor substrate. Afterward, an etching process is carried out. In the etching process, the rotating platform is rotated, and an etching solution is sprayed from a center region and a side region of the rotating platform toward the semiconductor substrate until the material layer is removed. Since the semiconductor substrate is etched by the etching solution sprayed from both the center region and the side region of the rotating platform, the etching uniformity of the semiconductor substrate is improved.