The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Aug. 08, 2006
Yu-lan Chang, Kao-Hsiung, TW;
Chao-ching Hsieh, Tai-Nan, TW;
Yi-wei Chen, Tai-Chung Hsien, TW;
Tzung-yu Hung, Tainan Hsien, TW;
Chun-chieh Chang, Tainan County, TW;
Yu-Lan Chang, Kao-Hsiung, TW;
Chao-Ching Hsieh, Tai-Nan, TW;
Yi-Wei Chen, Tai-Chung Hsien, TW;
Tzung-Yu Hung, Tainan Hsien, TW;
Chun-Chieh Chang, Tainan County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of making a transistor device having silicided source/drain is provided. A gate electrode is formed on a substrate with a gate dielectric layer therebetween. A spacer is formed on sidewalls of the gate electrode. A source/drain is implanted into the substrate. A pre-amorphization implant (PAI) is performed to form an amorphized layer on the source/drain. A post-PAI annealing process is performed to repair defects formed during the PAI process. A metal silicide layer is then formed from the amorphized layer.