The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Jan. 21, 2008
Yu-lan Chang, Kaohsiung, TW;
Chao-ching Hsieh, Hsinchu County, TW;
Yi-yiing Chiang, Taipei, TW;
Yi-wei Chen, Taichung County, TW;
Tzung-yu Hung, Tainan County, TW;
Yu-Lan Chang, Kaohsiung, TW;
Chao-Ching Hsieh, Hsinchu County, TW;
Yi-Yiing Chiang, Taipei, TW;
Yi-Wei Chen, Taichung County, TW;
Tzung-Yu Hung, Tainan County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device is provided. The method includes forming a refractory metal alloy layer over a silicon-containing conductive layer. The refractory metal alloy layer is constituted of a first refractory metal and a second refractory metal. Thereafter, a cap layer is formed on the refractory metal alloy layer. A thermal process is performed so that the refractory metal alloy layer reacts with silicon of the silicon-containing conductive layer to form a refractory metal alloy salicide layer. Afterwards, an etch process with an etch solution is performed to removes the cap layer and the refractory metal alloy layer which has not been reacted and to form a protection layer on the refractory metal alloy salicide layer.