The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Sep. 21, 2006
Chao-ching Hsieh, Hsinchu County, TW;
Chun-chieh Chang, Tainan County, TW;
Tzung-yu Hung, Tainan County, TW;
Chao-Ching Hsieh, Hsinchu County, TW;
Chun-Chieh Chang, Tainan County, TW;
Tzung-Yu Hung, Tainan County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating semiconductor device is provided. A transistor is formed on a substrate, and a metal silicide layer is formed on the surface of a gate conductor layer and a source/drain region. Next, a surface treatment process is performed to selectively form a protection layer on the surface of the metal silicide layer. Then, a spacer of the transistor is partially removed using the protection layer as a mask, so as to reduce the width of the spacer. Then, a stress layer is formed on the substrate.