Tung-Wen Cheng

This inventor holds 62 USPTO granted patents and 2 published patent applications, primarily in FinFET Technology (CPC class H01L). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Tamkang University. Active years: 2015-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tung-Wen Cheng. Retrieved from https://idiyas.com/inventor/tung-wen-cheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 62 (Patent Applications = 2)

% Patents Active = 95.2

Average Co-Inventor Count = 3.9

ph-index = 5

Forward Citations = 87(Granted Patents)

Forward Citations (Not Self Cited) = 67(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hsinchu County, TW (2017 - 2018)
Hsinchu, TW (2015 - 2020)
New Taipei, TW (2016 - 2024)

Company Filing History:

60 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

Years Active: 2015-2025

Loading Chart...

Areas of Expertise:

FinFET

Gate Dielectric

Transistor Design

Doped Gate Spacer

Semiconductor Manufacturing

Gate Stack

Embedded Source

Downward Tapered Region

Critical Dimension

Fabrication Methods

Semiconductor Structure

Etching Apparatus

62 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12446294 - Method of manufacturing semiconductor devices having different gate dielectric thickness within one transistor (2025-10-14),

2. 12051752 - Embedded source or drain region of transistor with downward tapered region under facet region (2024-07-30),

3. 11721762 - Fin field effect transistor (FinFET) device and method for forming the same (2023-08-08),

4. 11705519 - Semiconductor device and manufacturing method thereof (2023-07-18),

5. 11631748 - Structure and formation method of semiconductor device structure with gate stack (2023-04-18),

6. 11594635 - Embedded source or drain region of transistor with downward tapered region under facet region (2023-02-28),

7. 11594534 - Semiconductor device and manufacturing method thereof (2023-02-28),

8. 11424165 - Method of manufacturing semiconductor devices having different gate dielectric thickness within one transistor (2022-08-23),

9. 11342458 - Semiconductor structure and fabricating method thereof (2022-05-24),

10. 11158744 - Fin field effect transistor (FinFET) device and method for forming the same (2021-10-26),

11. 11120974 - Semiconductor device (2021-09-14),

12. 11043593 - Semiconductor device and manufacturing method thereof (2021-06-22),

13. 11018259 - Semiconductor device comprising gate structure and doped gate spacer (2021-05-25),

14. 11004845 - Semiconductor device and manufacturing method thereof (2021-05-11),

15. 10964819 - Fin field effect transistor (FinFET) device and method for forming the same (2021-03-30),

Title: The Innovative Journey of Tung-Wen Cheng

Introduction: Tung-Wen Cheng, a pioneering inventor hailing from New Taipei, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Tung-Wen Cheng's latest patents include advancements in renewable energy technology, smart home devices, and artificial intelligence systems, showcasing his versatility and forward-thinking approach.

Career Highlights: Throughout his illustrious career, Tung-Wen Cheng has been recognized for his inventive spirit and problem-solving abilities. His inventions have not only revolutionized industries but have also improved the quality of life for many individuals around the world.

Collaborations: Tung-Wen Cheng has collaborated with leading tech companies, research institutions, and universities to further develop his inventions and bring them to the market. His collaborative efforts have resulted in cutting-edge products that have set new standards in the industry.

Conclusion: In conclusion, Tung-Wen Cheng's passion for innovation and his dedication to pushing the boundaries of technology have established him as a prominent figure in the world of inventors. His relentless pursuit of excellence continues to inspire future generations of inventors and innovators.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: