The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Oct. 26, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Che-Cheng Chang, New Taipei, TW;
Tung-Wen Cheng, New Taipei, TW;
Chang-Yin Chen, Taipei, TW;
Mu-Tsang Lin, Hemei Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 21/306 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/49 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/0223 (2013.01); H01L 21/30604 (2013.01); H01L 21/31055 (2013.01); H01L 21/31144 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/42368 (2013.01); H01L 29/495 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/6656 (2013.01); H01L 29/6681 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 21/02255 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/32136 (2013.01); H01L 29/51 (2013.01);
Abstract
A semiconductor structure and a method of fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate; a metal gate structure on the substrate; and a spacer next to the metal gate structure having a skirting part extending into the metal gate structure and contacting the substrate. The metal gate structure includes a high-k dielectric layer and a metal gate electrode on the high-k dielectric layer.