Chang-Yin Chen

This inventor holds 74 USPTO granted patents, primarily in FinFET Technology (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang-Yin Chen. Retrieved from https://idiyas.com/inventor/chang-yin-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 74

% Patents Active = 94.6

Average Co-Inventor Count = 4.1

ph-index = 7

Forward Citations = 148(Granted Patents)

Forward Citations (Not Self Cited) = 121(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

74 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2014-2025

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Areas of Expertise:

FinFET Device

Semiconductor Device

Gate Structure

Isolation Features

Quality Monitoring

Tapered Sidewalls

Notched Gate

Work Function Layer

Embedded Source

High-K Film

Fabrication Method

Transistor Structure

74 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12408411 - Semiconductor device (2025-09-02),

2. 12261051 - Semiconductor device with fin isolation (2025-03-25),

3. 12237417 - FinFET device and method of forming and monitoring quality of the same (2025-02-25),

4. 12218216 - Method for manufacturing semiconductor devices having gate spacers with bottom portions recessed in a fin (2025-02-04),

5. 12211750 - Mechanisms for forming FinFET device (2025-01-28),

6. 12125891 - Semiconductor device having gate spacers extending below a fin top surface (2024-10-22),

7. 12002871 - Semiconductor device structure with work function layer and method for forming the same (2024-06-04),

8. 11973144 - Method of manufacturing a semiconductor and a semiconductor device (2024-04-30),

9. 11929419 - Semiconductor device (2024-03-12),

10. 11854825 - Gate structure of semiconductor device and method for forming the same (2023-12-26),

11. 11842932 - Notched gate structure fabrication (2023-12-12),

12. 11784055 - Method of forming semiconductor device with fin isolation (2023-10-10),

13. 11721762 - Fin field effect transistor (FinFET) device and method for forming the same (2023-08-08),

14. 11527636 - Semiconductor device structure with work function layer and method for forming the same (2022-12-13),

15. 11522084 - FinFET device and method of forming and monitoring quality of the same (2022-12-06),

Title: The Innovative Journey of Inventor Chang-Yin Chen

Introduction: Chang-Yin Chen, a distinguished inventor hailing from Taipei, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations and patented inventions.

Latest Patents: Chen's latest patents include a cutting-edge smart home automation system that integrates artificial intelligence for enhanced efficiency and a revolutionary medical device designed to improve patient care in hospitals worldwide.

Career Highlights: With a career spanning over two decades, Chen has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions. His work has been recognized globally, earning him prestigious awards and accolades in the industry.

Collaborations: Throughout his career, Chen has collaborated with leading technology companies, research institutions, and universities to further his research and bring his inventions to life. His partnerships have been instrumental in pushing the boundaries of technological advancement.

Conclusion: Chang-Yin Chen's relentless pursuit of innovation and commitment to excellence have solidified his reputation as a trailblazing inventor in the realm of technology. His passion for creating solutions that make a positive impact on society continues to drive his work forward, inspiring the next generation of inventors to think outside the box and push the boundaries of what is possible.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]