The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Apr. 18, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chang-Yin Chen, Taipei, TW;
Chai-Wei Chang, New Taipei, TW;
Bo-Feng Young, Taipei, TW;
Chia-Yang Liao, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor device includes forming a dummy gate over a substrate, forming dielectric materials over a top surface and sidewalls of the dummy gate, and replacing the dummy gate with a gate structure. The dummy gate has a first width located a first distance away from the substrate, a second width located a second distance away from the substrate, and a third width located a third distance away from the substrate. The second distance is less than the first distance. The second width is less than the first width. The third distance is less than the second distance. The third width is greater than the second width.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile