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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11929419 B1

PDFFull Text
Date of Patent:
Mar. 12, 2024

Filed:

Dec. 21, 2020

Semiconductor device

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chang-Yin Chen, Taipei, TW;

Che-Cheng Chang, New Taipei, TW;

Chih-Han Lin, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Evren Seven

Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4991 (2013.01); H01L 21/28088 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 21/0206 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31053 (2013.01); H01L 21/31111 (2013.01); H01L 21/3212 (2013.01); H01L 21/76224 (2013.01); H01L 29/4966 (2013.01);
Abstract

A device includes a semiconductive fin having source and drain regions and a channel region between the source and drain regions, a gate feature over the channel region of the semiconductive fin, a first spacer around the gate feature, source and drain features respectively in the source and drain regions of the semiconductive fin, an interlayer dielectric layer around the first spacer, and a void between the first spacer and the interlayer dielectric layer and spaced apart from the gate feature and the source and drain features.

Find Patent Forward Citations

Chen, Chang-Yin. (2024). Semiconductor device (U.S. Patent No. 11929419). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11929419

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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