The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
May. 20, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Wei-Yang Lo, Kaohsiung, TW;
Tung-Wen Cheng, New Taipei, TW;
Chia-Ling Chan, New Taipei, TW;
Mu-Tsang Lin, Changhua County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/223 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/2236 (2013.01); H01L 29/6659 (2013.01); H01L 29/66492 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/66803 (2013.01); H01L 29/7833 (2013.01);
Abstract
A semiconductor device includes a substrate, at least one source drain feature, a gate structure, and at least one gate spacer. The source/drain feature is present at least partially in the substrate. The gate structure is present on the substrate. The gate spacer is present on at least one sidewall of the gate structure. At least a bottom portion of the gate spacer has a plurality of dopants therein.