Wei-Yang Lo

Title: Innovations of Wei-Yang Lo in Semiconductor Technology

Introduction

Wei-Yang Lo is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on advancing semiconductor devices, which are crucial for modern electronics.

Latest Patents

Among his latest patents is a semiconductor device comprising a gate structure and doped gate spacer. This invention includes a substrate, at least one source drain feature, a gate structure, and at least one gate spacer. The source/drain feature is present at least partially in the substrate, while the gate structure is positioned on the substrate. The gate spacer is located on at least one sidewall of the gate structure, with a plurality of dopants present in the bottom portion of the gate spacer. Another notable patent is the FinFET device with an asymmetrical drain/source feature. This semiconductor device features a fin-like structure extending along a first axis, with a first source/drain feature at one end. The design includes a constraint layer on one side of the fin-like structure, enhancing the device's performance.

Career Highlights

Wei-Yang Lo is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has positioned him as a key figure in the development of advanced semiconductor technologies.

Collaborations

Throughout his career, Wei-Yang Lo has collaborated with notable colleagues, including Tung-Wen Cheng and Mu-Tsang Lin. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

Wei-Yang Lo's contributions to semiconductor technology through his patents and collaborations highlight his importance in the field. His innovative designs continue to influence the future of electronics.