The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2019
Filed:
Mar. 23, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Wei-Yang Lo, Kaohsiung, TW;
Shih-Hao Chen, Hsinchu County, TW;
Mu-Tsang Lin, Changhua County, TW;
Tung-Wen Cheng, New Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 29/0847 (2013.01); H01L 29/6656 (2013.01); H01L 29/785 (2013.01); H01L 29/7854 (2013.01); H01L 29/7848 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes forming a gate stack over a semiconductor fin such that the gate stack exposes the semiconductor fin. The semiconductor fin exposed by the gate stack is recessed. An epitaxy structure is epitaxially grown on a recessed portion of the semiconductor fin, and the epitaxy structure is etched such that the epitaxy structure has a curved top.