The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Dec. 19, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tung-Wen Cheng, New Taipei, TW;

Chih-Shan Chen, New Taipei, TW;

Wei-Yang Lo, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/306 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/30604 (2013.01); H01L 21/823431 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1054 (2013.01); H01L 29/167 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01);
Abstract

An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a first portion of the isolation region being between the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a gate seal spacer on sidewalls of the gate structure, a first portion of the gate seal spacer being on the first portion of the isolation region between the first fin and the second fin, and a source/drain region on the first fin and the second fin adjacent the gate structure.


Find Patent Forward Citations

Loading…