The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Jun. 10, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Wei-Yang Lo, Kaohsiung, TW;
Shih-Hao Chen, Hsinchu County, TW;
Mu-Tsang Lin, Changhua County, TW;
Tung-Wen Cheng, New Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 29/0847 (2013.01); H01L 29/6656 (2013.01); H01L 29/785 (2013.01); H01L 29/7854 (2013.01); H01L 29/7848 (2013.01);
Abstract
A transistor includes a semiconductive fin having a channel portion, a gate stack over the channel portion of the semiconductive fin, source and drain structures on opposite sides of the gate stack and adjoining the semiconductive fin, and a sidewall structure extending along sidewalls of a body portion of the source structure. The source structure has a curved top, and the source structure has a top portion protruding over a top of the sidewall structure.