The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Nov. 06, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tung-Wen Cheng, New Taipei, TW;

Chih-Shan Chen, New Taipei, TW;

Mu-Tsang Lin, Hemei Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 23/528 (2013.01); H01L 29/0657 (2013.01); H01L 29/41791 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/66545 (2013.01); H01L 2029/7858 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate, a plurality of semiconductor fins, a gate stack and an epitaxy structure. The semiconductor fins are present on the semiconductor substrate. The semiconductor fins respectively include recesses therein. The gate stack is present on portions of the semiconductor fins that are adjacent to the recesses. The epitaxy structure is present across the recesses of the semiconductor fins. The epitaxy structure includes a plurality of corners and at least one groove present between the corners, and the groove has a curvature radius greater than that of at least one of the corners.


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