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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11120974 B1

PDFFull Text
Date of Patent:
Sep. 14, 2021

Filed:

Jun. 22, 2020

Semiconductor device

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chang-Yin Chen, Taipei, TW;

Tung-Wen Cheng, New Taipei, TW;

Che-Cheng Chang, New Taipei, TW;

Jr-Jung Lin, Hsinchu, TW;

Chih-Han Lin, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Steven M Christopher

Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/8234 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 21/67069 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7856 (2013.01); H01J 2237/334 (2013.01);
Abstract

A dry etching apparatus includes a process chamber, a stage, a gas supply device and a plasma generating device. The stage is in the process chamber and is configured to support a wafer, wherein the wafer has a center region and a periphery region surrounding the center region. The gas supply device is configured to supply a first flow of an etching gas to the center region and supply a second flow of the etching gas to the periphery region. The plasma generating device is configured to generate plasma from the etching gas.

Find Patent Forward Citations

Chen, Chang-Yin. (2021). Semiconductor device (U.S. Patent No. 11120974). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11120974

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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