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For the Inventor, By the Inventor

Hsinchu, Taiwan

Jr-Jung Lin

USPTO Granted Patents = 66 

Average Co-Inventor Count = 4.2

ph-index = 8

Forward Citations = 199(Granted Patents)

Forward Citations (Not Self Cited) = 165(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Wurih Township, TW (2013 - 2020)
  • Hsin-Chu, TW (2015 - 2023)

Company Filing History:

goldMedal66 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2013-2025

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Areas of Expertise:
FinFET Device
Gate Structure
Semiconductor Device
Dummy Fin
Field Effect Transistor
Metal Gate Electrode
Dry Etching Apparatus
Semiconductor Structure
High-K/Metal Gate
Isolation Techniques
Patterned Oxide
Manufacturing Methods
66 patents (USPTO):Explore Patents
1. 12243924 - Gate structure with non-linear profile for transistors (2025-03-04),
2. 12211750 - Mechanisms for forming FinFET device (2025-01-28),
3. 12142609 - Dummy fin between first and second semiconductor fins (2024-11-12),
4. 12125751 - Method and structure for FinFET isolation (2024-10-22),
5. 12113122 - Dummy fin profile control to enlarge gate process window (2024-10-08),
6. 11764222 - Method of forming a dummy fin between first and second semiconductor fins (2023-09-19),
7. 11721746 - Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features (2023-08-08),
8. 11670711 - Metal gate electrode of a semiconductor device (2023-06-06),
9. 11605719 - Gate structure with desired profile for semiconductor devices (2023-03-14),
10. 11605564 - Method and structure for FinFET isolation (2023-03-14),
11. 11600717 - Dummy FIN profile control to enlarge gate process window (2023-03-07),
12. 11380590 - Mechanisms for forming FinFET device (2022-07-05),
13. 11257931 - Gate structure of field effect transistor with footing (2022-02-22),
14. 11217586 - Semiconductor device having dummy fin physically separating the first and second gate stacks (2022-01-04),
15. 11121039 - FinFET structures and methods of forming the same (2021-09-14),

Title: The Innovative Journey of Jr-Jung Lin

Introduction:

Jr-Jung Lin, a distinguished inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents:

Jr-Jung Lin's latest patents focus on cutting-edge advancements in semiconductor technology, including novel methods for enhancing chip performance and efficiency.

Career Highlights:

With a career spanning over two decades, Jr-Jung Lin has held key roles in leading tech companies, driving research and development initiatives that have resulted in groundbreaking inventions.

Collaborations:

Throughout his career, Jr-Jung Lin has collaborated with top researchers, engineers, and industry experts to push the boundaries of technological innovation and bring revolutionary ideas to life.

Conclusion:

In conclusion, Jr-Jung Lin's relentless pursuit of innovation and his passion for pushing the limits of technology have solidified his reputation as a visionary inventor in the vibrant tech landscape of Hsinchu, Taiwan.

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