The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2023

Filed:

Aug. 13, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih Ping Wang, Hsinchu, TW;

Chao-Cheng Chen, Hsinchu, TW;

Jr-Jung Lin, Hsinchu, TW;

Chi-Wei Yang, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/3213 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42376 (2013.01); H01L 21/32135 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/41791 (2013.01);
Abstract

Semiconductor device structures with a gate structure having different profiles at different portions of the gate structure may include a fin structure on a substrate, a source/drain structure on the fin structure, and a gate structure over the fin structure and along a sidewall of the fin. The source/drain structure is proximate the gate structure. The gate structure has a top portion having a first sidewall profile and a bottom portion having a second sidewall profile different from the first sidewall profile.


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