Chi-Wei Yang

Title: Innovations of Chi-Wei Yang

Introduction

Chi-Wei Yang is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work focuses on advanced gate structures for transistors, which are crucial for the performance of semiconductor devices.

Latest Patents

Chi-Wei Yang's latest patents include innovative designs for gate structures with non-linear profiles for transistors. These semiconductor device structures feature a gate structure that has different profiles at various portions. The designs incorporate a fin structure on a substrate, a source/drain structure on the fin, and a gate structure positioned over the fin and along its sidewall. The source/drain structure is located close to the gate structure, which has a top portion with a first sidewall profile and a bottom portion with a second sidewall profile that differs from the first.

Another significant patent by Yang is for a gate structure with a desired profile for semiconductor devices. Similar to his previous work, this patent also includes a fin structure on a substrate and a source/drain structure on the fin. The gate structure is designed to enhance the performance of semiconductor devices by optimizing the profiles of its components.

Career Highlights

Throughout his career, Chi-Wei Yang has worked with prominent companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and Qisda Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Chi-Wei Yang has collaborated with several talented individuals in his field, including Chao-Cheng Chen and Jr-Jung Lin. These collaborations have contributed to the advancement of semiconductor technologies and the successful development of his patents.

Conclusion

Chi-Wei Yang is a distinguished inventor whose work in semiconductor technology has led to significant advancements in gate structures for transistors. His innovative patents and collaborations with industry professionals highlight his contributions to the field.