Taiwan Semiconductor Manufacturing Comp. Ltd.

Qisda Corporation

Chi-Wei Yang

Jr-Jung Lin

Chao-Cheng Chen

Chih-Han Lin

Shih-Yao Lin

Hsiao Wen Lee

Chih Hsuan Wang

Chang-Hung Lee

Chih Ping Wang

Cheng-Tien Chu

Ricky Wang

A method for making a semiconductor device includes forming a first fin structure, a second fin structure, and a third fin structure over a substrate. The first through third fin structures all extend along a first lateral direction, and the second fin structure is disposed between the first and third fin structures. The method includes forming a mold by filling up trenches between neighboring ones of the first through third fin structures with a first dielectric material. The method includes cutting the second fin structure by removing an upper portion of the second fin structure. The method includes replacing the upper portion of the second fin structure with a second dielectric material to form a dielectric cut structure. The method includes recessing the mold to expose upper portions of the first fin structure and the third fin structure, respectively.

Semiconductor devices and methods of manufacturing thereof

Semiconductor device structures with a gate structure having different profiles at different portions of the gate structure may include a fin structure on a substrate, a source/drain structure on the fin structure, and a gate structure over the fin structure and along a sidewall of the fin. The source/drain structure is proximate the gate structure. The gate structure has a top portion having a first sidewall profile and a bottom portion having a second sidewall profile different from the first sidewall profile.

Gate structure with non-linear profile for transistors

Gate structure with desired profile for semiconductor devices

Semiconductor device structures comprising a gate structure having different profiles at different portions of the gate structure are provided. In some examples, a semiconductor device includes a fin structure on a substrate, a source/drain structure on the fin structure, and a gate structure over the fin structure and along a sidewall of the fin. The source/drain structure is proximate the gate structure. The gate structure has a top portion having a first sidewall profile and a bottom portion having a second sidewall profile different from the first sidewall profile.

An apparatus for processing a video signal with N frames is provided. The apparatus includes an encoding module and a selecting module. The encoding module performs a 1through a Nencoding procedure. The 1through the Nencoding procedure respectively encodes the 1through the Nframe among the N frames in a full-image-encoding mode, encodes other frames in an adaptive-image-encoding mode, and calculates the data amount of the N encoded frames in each encoding procedure, respectively. The selecting module selects the N encoded frames with the smallest data amount among the encoding procedures been performed.

Method and apparatus for processing video signal

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Taoyuan, Taiwan

Chi-Wei Yang