The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Mar. 18, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Zhe-Hao Zhang, Hsinchu, TW;
Tung-Wen Cheng, New Taipei, TW;
Chang-Yin Chen, Taipei, TW;
Che-Cheng Chang, New Taipei, TW;
Yung-Jung Chang, Cyonglin Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure are provided. The FinFET structure includes a substrate and a fin structure extending above the substrate. The FinFET structure includes an epitaxial structure formed on the fin structure, and the epitaxial structure has a first height. The FinFET structure also includes fin sidewall spacers formed adjacent to the epitaxial structure. The sidewall spacers have a second height and the first height is greater than the second height, and the fin sidewall spacers are configured to control a volume and the first height of the epitaxial structure.