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For the Inventor, By the Inventor

Cyonglin, Taiwan

Yung-Jung Chang

This inventor holds 34 USPTO granted patents, primarily in FinFET Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Industrial Technology Research Institute, Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 1998-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yung-Jung Chang. Retrieved from https://idiyas.com/inventor/yung-jung-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34

% Patents Active = 85.3

Average Co-Inventor Count = 4.2

ph-index = 5

Forward Citations = 89(Granted Patents)


Location History:

  • Cyonglin Township, Hsinchu County, TW (2018 - 2019)
  • Hsinchu County, TW (2015 - 2020)
  • Hsin-Chu, TW (1998 - 2023)
  • Cyonglin Township, TW (2015 - 2023)

Company Filing History:

goldMedal31 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal2 out of 9,307 
 
Industrial Technology Research Institute
 patents
bronzeMedal1 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 1998-2026

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Areas of Expertise:
FinFET Device
Semiconductor Wafer
High-K Film
Strained Source
Dielectric Layer
Calibration Equipment
Patterned Oxide
Metal Gate Transistor
Critical Dimension
34 patents (USPTO):Explore Patents
1. 12764994 - Fin field effect transistor (FinFET) device and method for forming the same (2026-10-13),
2. 12211750 - Mechanisms for forming FinFET device (2025-01-28),
3. 11721762 - Fin field effect transistor (FinFET) device and method for forming the same (2023-08-08),
4. 11669957 - Semiconductor wafer measurement method and system (2023-06-06),
5. 11380590 - Mechanisms for forming FinFET device (2022-07-05),
6. 11158744 - Fin field effect transistor (FinFET) device and method for forming the same (2021-10-26),
7. 11094057 - Semiconductor wafer measurement method and system (2021-08-17),
8. 10964819 - Fin field effect transistor (FinFET) device and method for forming the same (2021-03-30),
9. 10861954 - High-K film apparatus and method (2020-12-08),
10. 10840378 - Fin field effect transistor (FinFET) device and method for forming the same (2020-11-17),
11. 10762621 - Semiconductor wafer measurement method and system (2020-09-01),
12. 10749014 - Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features (2020-08-18),
13. 10686077 - Fin field effect transistor (FinFET) device and method for forming the same (2020-06-16),
14. 10672796 - Mechanisms for forming FINFET device (2020-06-02),
15. 10547796 - Calibration equipment and calibration method of a mechanical system (2020-01-28),

Title: Yung-Jung Chang: Pioneering Inventor from Cyonglin, Taiwan

Introduction: Yung-Jung Chang is a highly respected inventor hailing from Cyonglin, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yung-Jung Chang's most recent patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: With a career spanning over two decades, Yung-Jung Chang has worked with leading research institutions and technology companies to bring his innovative ideas to life. His work has significantly impacted the renewable energy sector and has garnered international recognition.

Collaborations: Throughout his career, Yung-Jung Chang has collaborated with top engineers, scientists, and researchers from around the world to push the boundaries of technological innovation. His collaborative efforts have led to the development of cutting-edge solutions that address some of the most pressing challenges in the industry.

Conclusion: Yung-Jung Chang's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a trailblazer in the field of technology. His contributions continue to inspire the next generation of inventors and shape the future of renewable energy.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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