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For the Inventor, By the Inventor

Hsinchu, Taiwan

Zhe-Hao Zhang

USPTO Granted Patents = 25 

Average Co-Inventor Count = 4.6

ph-index = 4

Forward Citations = 37(Granted Patents)


Location History:

  • Hsinchu County, TW (2019)
  • Hsin-Chu, TW (2014 - 2024)

Company Filing History:

goldMedal25 out of 40,927 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2014-2024

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25 patents (USPTO):Explore Patents
1. 12051752 - Embedded source or drain region of transistor with downward tapered region under facet region (2024-07-30),
2. 11721762 - Fin field effect transistor (FinFET) device and method for forming the same (2023-08-08),
3. 11705519 - Semiconductor device and manufacturing method thereof (2023-07-18),
4. 11631748 - Structure and formation method of semiconductor device structure with gate stack (2023-04-18),
5. 11594635 - Embedded source or drain region of transistor with downward tapered region under facet region (2023-02-28),
6. 11158744 - Fin field effect transistor (FinFET) device and method for forming the same (2021-10-26),
7. 11043593 - Semiconductor device and manufacturing method thereof (2021-06-22),
8. 10964819 - Fin field effect transistor (FinFET) device and method for forming the same (2021-03-30),
9. 10840378 - Fin field effect transistor (FinFET) device and method for forming the same (2020-11-17),
10. 10811516 - Structure and formation method of semiconductor device structure with gate stack (2020-10-20),
11. 10804396 - Embedded source or drain region of transistor with downward tapered region under facet region (2020-10-13),
12. 10686077 - Fin field effect transistor (FinFET) device and method for forming the same (2020-06-16),
13. 10546956 - Fin field effect transistor (FinFET) device and method for forming the same (2020-01-28),
14. 10483394 - Semiconductor device and manufacturing method thereof (2019-11-19),
15. 10340382 - Embedded source or drain region of transistor with downward tapered region under facet region (2019-07-02),

Title: The Innovative Journey of Zhe-Hao Zhang

Introduction:

Zhe-Hao Zhang, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Zhang's latest patents include cutting-edge advancements in semiconductor technology, artificial intelligence, and renewable energy solutions, showcasing his versatility and forward-thinking approach.

Career Highlights:

With a career spanning over two decades, Zhang has worked with leading tech companies and research institutions, honing his skills and pushing the boundaries of what is possible in the world of innovation. His keen eye for detail and passion for problem-solving have led to the development of several game-changing inventions.

Collaborations:

Zhang has collaborated with top engineers, scientists, and researchers from around the globe, fostering a culture of creativity and excellence. His ability to work in diverse teams and leverage collective expertise has resulted in the successful implementation of numerous projects.

Conclusion:

In conclusion, Zhe-Hao Zhang stands as a beacon of innovation, inspiring the next generation of inventors to dream big and push the limits of what technology can achieve. His relentless pursuit of excellence and unwavering dedication to his craft continue to shape the landscape of innovation in Taiwan and beyond.

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