Zhe-Hao Zhang

This inventor holds 26 USPTO granted patents, primarily in FinFET Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhe-Hao Zhang. Retrieved from https://idiyas.com/inventor/zhe-hao-zhang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26

% Patents Active = 92.3

Average Co-Inventor Count = 4.6

ph-index = 4

Forward Citations = 38(Granted Patents)

Location History:

Hsinchu County, TW (2019)
Hsin-Chu, TW (2014 - 2024)

Company Filing History:

25 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

1 out of 481

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

Years Active: 2014-2026

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Areas of Expertise:

FinFET

Transistor

Semiconductor

Manufacturing

Device Structure

Gate Stack

Embedded Region

Downward Tapered

26 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12764994 - Fin field effect transistor (FinFET) device and method for forming the same (2026-10-13),

2. 12051752 - Embedded source or drain region of transistor with downward tapered region under facet region (2024-07-30),

3. 11721762 - Fin field effect transistor (FinFET) device and method for forming the same (2023-08-08),

4. 11705519 - Semiconductor device and manufacturing method thereof (2023-07-18),

5. 11631748 - Structure and formation method of semiconductor device structure with gate stack (2023-04-18),

6. 11594635 - Embedded source or drain region of transistor with downward tapered region under facet region (2023-02-28),

7. 11158744 - Fin field effect transistor (FinFET) device and method for forming the same (2021-10-26),

8. 11043593 - Semiconductor device and manufacturing method thereof (2021-06-22),

9. 10964819 - Fin field effect transistor (FinFET) device and method for forming the same (2021-03-30),

10. 10840378 - Fin field effect transistor (FinFET) device and method for forming the same (2020-11-17),

11. 10811516 - Structure and formation method of semiconductor device structure with gate stack (2020-10-20),

12. 10804396 - Embedded source or drain region of transistor with downward tapered region under facet region (2020-10-13),

13. 10686077 - Fin field effect transistor (FinFET) device and method for forming the same (2020-06-16),

14. 10546956 - Fin field effect transistor (FinFET) device and method for forming the same (2020-01-28),

15. 10483394 - Semiconductor device and manufacturing method thereof (2019-11-19),

Title: The Innovative Journey of Zhe-Hao Zhang

Introduction:

Zhe-Hao Zhang, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Zhang's latest patents include cutting-edge advancements in semiconductor technology, artificial intelligence, and renewable energy solutions, showcasing his versatility and forward-thinking approach.

Career Highlights:

With a career spanning over two decades, Zhang has worked with leading tech companies and research institutions, honing his skills and pushing the boundaries of what is possible in the world of innovation. His keen eye for detail and passion for problem-solving have led to the development of several game-changing inventions.

Collaborations:

Zhang has collaborated with top engineers, scientists, and researchers from around the globe, fostering a culture of creativity and excellence. His ability to work in diverse teams and leverage collective expertise has resulted in the successful implementation of numerous projects.

Conclusion:

In conclusion, Zhe-Hao Zhang stands as a beacon of innovation, inspiring the next generation of inventors to dream big and push the limits of what technology can achieve. His relentless pursuit of excellence and unwavering dedication to his craft continue to shape the landscape of innovation in Taiwan and beyond.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]