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Seto, Japan

Tsutomu Uesugi

This inventor holds 22 USPTO granted patents and 2 published patent applications and 3 EPO patents, primarily in Semiconductor Devices. Top assignees: Kabushiki Kaisha Toyota Chuo Kenkyusho, Toyota Jidosha Kabushiki Kaisha, Denso Corporation. Active years: 1998-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsutomu Uesugi. Retrieved from https://idiyas.com/inventor/tsutomu-uesugi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 63.6

 

Average Co-Inventor Count = 3.7

ph-index = 9

Forward Citations = 370(Granted Patents)


Location History:

  • Aichi, JP (2000 - 2004)
  • Aichi-gun, JP (2003 - 2006)
  • Aichi-ken, JP (2012)
  • Seto, JP (1998 - 2017)
  • Nagakute, JP (2016 - 2020)

Company Filing History:

goldMedal10 out of 1,153 
 
Kabushiki Kaisha Toyota Chuo Kenkyusho
 patents
silverMedal9 out of 38,970 
 
Toyota Jidosha Kabushiki Kaisha
 patents
bronzeMedal4 out of 20,436 
 
Denso Corporation
 patents
4. 1 out of 652 
 
Rensselaer Polytechnic Institute
 patents
where one patent can have more than one assignee

Years Active: 1998-2020

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Areas of Expertise:
Power Semiconductor Device
High Electron Mobility Transistor
III-V HEMT Devices
Nitride Semiconductor Device
Vertical Electrodes Structure
Lateral MOS Transistor
Hetero Junction
Insulated-Gate Device
Contact Region
Fabrication Method
Vertical Type Element
22 patents (USPTO):Explore Patents
1. 10763355 - Power semiconductor device (2020-09-01),
2. 10381469 - Semiconductor device and method of manufacturing the same (2019-08-13),
3. 9818856 - Semiconductor device with high electron mobility transistor (2017-11-14),
4. 9735260 - III-V HEMT devices (2017-08-15),
5. 9337267 - Semiconductor device (2016-05-10),
6. 9184271 - III-V HEMT devices (2015-11-10),
7. 8299498 - Semiconductor device having hetero junction (2012-10-30),
8. 8222675 - Nitride semiconductor device including gate insulating portion containing AIN (2012-07-17),
9. 8188514 - Transistor (2012-05-29),
10. 8110870 - Semiconductor device (2012-02-07),
11. 8008749 - Semiconductor device having vertical electrodes structure (2011-08-30),
12. 7800130 - Semiconductor devices (2010-09-21),
13. 7777252 - III-V hemt devices (2010-08-17),
14. 7211839 - Group III nitride semiconductor device (2007-05-01),
15. 6982459 - Semiconductor device having a vertical type semiconductor element (2006-01-03),

Title: Tsutomu Uesugi: Pioneering Inventor from Seto, Japan

Introduction: Tsutomu Uesugi is a renowned inventor hailing from Seto, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tsutomu Uesugi holds several patents in various technological domains, showcasing his continuous dedication to pushing the boundaries of innovation.

Career Highlights: Throughout his illustrious career, Tsutomu Uesugi has been instrumental in developing cutting-edge technologies that have revolutionized industries worldwide. His innovative spirit and relentless pursuit of excellence have earned him a stellar reputation in the inventor community.

Collaborations: Tsutomu Uesugi has collaborated with leading tech companies, research institutions, and universities to further his research and bring his inventions to life. His ability to work seamlessly in multidisciplinary teams has led to the creation of groundbreaking solutions that have had a lasting impact.

Conclusion: Tsutomu Uesugi's passion for innovation, coupled with his exceptional talent, has solidified his position as a trailblazer in the world of inventions. His contributions continue to inspire future generations of inventors to think outside the box and strive for technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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