The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Aug. 28, 2014
Denso Corporation, Kariya, Aichi-pref., JP;
Yoshinori Tsuchiya, Kariya, JP;
Shinichi Hoshi, Kariya, JP;
Kazuyoshi Tomita, Nagakute, JP;
Kenji Itoh, Nagakute, JP;
Masahito Kodama, Nagakute, JP;
Tsutomu Uesugi, Nagakute, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes a switching device having: a substrate configured by a semi-insulating material or a semiconductor; a channel forming layer on the substrate that is configured by a compound semiconductor mainly having a group III nitride; a gate structure configured by a gate electrode on the channel forming layer with a gate insulating film interposed therebetween; and a source electrode and a drain electrode on the channel forming layer at both sides of the gate structure respectively, a collapse inhibiting layer on the channel forming layer in an element region of the channel forming layer where the switching device is arranged that is configured by an insulating material; and a leakage inhibiting layer on the channel forming layer in an element isolation region of the channel forming layer surrounding the element region that is configured by an insulating material different from that of the collapse inhibiting layer.