Aichi, Japan

Masahito Kodama

This inventor holds 6 USPTO granted patents and 1 published patent application. Top assignees: Kabushiki Kaisha Toyota Chuo Kenkyusho, Denso Corporation, Toyoda Gosei Co., Ltd.. Active years: 1998-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahito Kodama. Retrieved from https://idiyas.com/inventor/masahito-kodama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 66.7

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 110(Granted Patents)


Location History:

  • Komaki, JP (1998)
  • Aichi, JP (2000 - 2005)
  • Aichi-ken, JP (2010)
  • Nagakute, JP (2019)

Company Filing History:


Years Active: 1998-2019

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6 patents (USPTO):Explore Patents

Title: Masahito Kodama: Innovator in Semiconductor Technology

Introduction

Masahito Kodama is a prominent inventor based in Aichi, Japan, known for his significant contributions to semiconductor technology. With a total of 6 patents to his name, he has made remarkable advancements in the field, particularly in the development of semiconductor devices.

Latest Patents

Kodama's latest patents include a semiconductor device and a method of manufacturing the same. This innovative semiconductor device features a switching device that comprises a substrate made from a semi-insulating material or a semiconductor. It also includes a channel forming layer composed of a compound semiconductor primarily based on group III nitride. The device is designed with a gate structure that incorporates a gate electrode and a gate insulating film, along with source and drain electrodes positioned on either side of the gate structure. Additionally, it features a collapse inhibiting layer and a leakage inhibiting layer, both made from insulating materials, enhancing the device's performance.

Another notable patent is focused on a group III nitride-based semiconductor and its production method. This invention outlines a process for producing a group III nitride semiconductor with a reduced number of crystal defects. The method involves epitaxially growing a GaN layer on a sapphire substrate and subsequently wet-etching the layer to form an etch pit. This process ultimately leads to a GaN layer with a lower screw dislocation density, improving the quality of the semiconductor.

Career Highlights

Throughout his career, Masahito Kodama has worked with esteemed companies such as Kabushiki Kaisha Toyota Chuo Kenkyusho and Toyoda Gosei Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Kodama has collaborated with notable colleagues, including Tsutomu Uesugi and Kazuyoshi Tomita. These partnerships have fostered a collaborative environment that has led to significant advancements in their respective fields.

Conclusion

Masahito Kodama's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry, paving the way for future innovations in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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