The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Dec. 31, 2001
Applicant:
Inventors:
Masahito Kodama, Aichi, JP;
Tsutomu Uesugi, Aichi, JP;
Assignee:
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi-gun, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/358 ; H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/358 ; H01L 2/18242 ;
Abstract
There is provided a method of manufacturing a vertical semiconductor device including a structural section in which an n -type semiconductor region and a p -type semiconductor region are arranged alternately without filling trenches by epitaxial growth. A p -type silicon layer ( ) which becomes a p -type semiconductor region ( ) is formed. An n -type semiconductor region ( ) is formed by diffusing n-type impurities into the p -type silicon layer ( ) through the sidewalls of first trenches ( ) formed in the p -type silicon layer ( ).