The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Mar. 19, 2002
Seiji Nagai, Aichi, JP;
Kazuyoshi Tomita, Aichi, JP;
Masahito Kodama, Aichi, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Abstract
A GaN layergrows in vertical direction on a GaN layerwhere neither a first masknor a second maskis formed. When thickness of the GaN layerbecomes larger than that of the first mask, it began to grown in lateral direction so as to cover the first mask. Because the second maskis not formed on the upper portion of the first mask, the GaN layergrows in vertical direction. On the contrary, at the upper region of the GaN layerwhere the maskis not formed, the second maskis formed like eaves, the growth of the GaN layerstops and threading dislocations propagated with vertical growth also stops there. The GaN layergrows in vertical direction so as to penetrate the region where neither the first masknor the second maskis formed. When the height of the GaN layerbecomes larger than that of the second mask, the GaN layerbegins to grow in lateral direction again and covers the second mask. After the GaN layercompletely covers the second mask, it began to grow in vertical direction.