Aichi, Japan

Seiji Nagai

This inventor holds 35 USPTO granted patents, primarily in III Nitride Semiconductors. Top assignees: Toyoda Gosei Co., Ltd., Ngk Insulators, Inc., Osaka University. Active years: 1993-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seiji Nagai. Retrieved from https://idiyas.com/inventor/seiji-nagai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 71.4

Average Co-Inventor Count = 4.0

ph-index = 12

Forward Citations = 683(Granted Patents)


Location History:

  • Atsugi-shi, Kanagawa-ken, JP (1993)
  • Acihi-ken, JP (2002)
  • Nishikasugai-gun, JP (2002 - 2004)
  • Aichi-ken, JP (1998 - 2013)
  • Aichi, JP (2000 - 2016)
  • Kiyosu, JP (2015 - 2017)

Company Filing History:


Years Active: 1993-2017

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Areas of Expertise:
GaN Substrate
Semiconductor Crystal
Light-Emitting Device
N-Type Semiconductor
Crystal Growing Apparatus
Compound Semiconductor
Semiconductor Laser
Fabrication Methods
Electrode Formation
Production Method
Semiconductor Element
Etching Techniques
35 patents (USPTO):Explore Patents

Title: Seiji Nagai: Innovator in Group III Nitride Semiconductor Technologies

Introduction

Seiji Nagai, based in Aichi, Japan, is a prominent inventor with an impressive portfolio that includes 35 patents. His work primarily focuses on advancements in semiconductor technologies, particularly involving Group III nitride compounds. His innovations have greatly contributed to the field, providing solutions that enhance the production processes and quality of semiconductor materials.

Latest Patents

Nagai's recent patents introduce methods for producing Group III nitride semiconductor crystals and GaN substrates. One such invention aims to minimize dislocation density transfer and prevent crack formation during the growth of these materials. This method involves the formation of a mask layer on a GaN substrate, allowing GaN layers to be grown using a specific molten mixture comprised of Group III metals and sodium. Non-crystalline portions containing flux ingredients are also created on the mask layer, contributing to the overall structural integrity of the device.

Another notable patent elaborates on producing a Group III nitride semiconductor single crystal with enhanced crystallinity. This process includes forming trenches in a mask layer that penetrate to the substrate, followed by melting back to increase trench dimensions and improve material quality. The GaN layers are subsequently grown from the surface of the mask layer, further refining the semiconductor's properties.

Career Highlights

Throughout his career, Seiji Nagai has worked with well-known companies, including Toyoda Gosei Co., Ltd. and NGK Insulators, Inc. His experience in these organizations allowed him to collaborate on significant projects and push the boundaries of semiconductor technology. His innovative spirit and technical expertise have made him a valuable figure in the electronics industry.

Collaborations

Nagai has had the privilege of collaborating with esteemed colleagues such as Masayoshi Koike and Shiro Yamasaki. These professional relationships have fostered an environment of creativity and innovation, enabling breakthroughs in semiconductor design and production methodologies.

Conclusion

Seiji Nagai's contributions to the field of semiconductors are significant and continue to impact technology today. His extensive patent portfolio highlights his dedication to innovation, particularly in the development of Group III nitride materials. As the semiconductor industry evolves, Nagai's work will undoubtedly inspire future advancements and innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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