The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Mar. 26, 2010
Takayuki Sato, Aichi-ken, JP;
Seiji Nagai, Aichi-ken, JP;
Makoto Iwai, Kasugai, JP;
Shuhei Higashihara, Nagoya, JP;
Yusuke Mori, Suita, JP;
Yasuo Kitaoka, Suita, JP;
Takayuki Sato, Aichi-ken, JP;
Seiji Nagai, Aichi-ken, JP;
Makoto Iwai, Kasugai, JP;
Shuhei Higashihara, Nagoya, JP;
Yusuke Mori, Suita, JP;
Yasuo Kitaoka, Suita, JP;
Toyoda Gosei Co., Ltd., Kiyosu-Shi, Aichi-Ken, JP;
NGK Insulators, Ltd., Nagoya, Aichi-Pref., JP;
Osaka University, Suita-Shi, Osaka, JP;
Abstract
An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.