Aichi, Japan

Takayuki Sato

This inventor holds 8 USPTO granted patents. Top assignees: Toyoda Gosei Co., Ltd., Ngk Insulators, Inc., Osaka University. Active years: 2004-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takayuki Sato. Retrieved from https://idiyas.com/inventor/takayuki-sato-a0sa4yw5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 87.5

Average Co-Inventor Count = 6.4

ph-index = 2

Forward Citations = 6(Granted Patents)


Location History:

  • Toyokawa, JP (2004)
  • Aichi-ken, JP (2010 - 2013)
  • Aichi, JP (2013 - 2016)
  • Kiyosu, JP (2022)

Company Filing History:


Years Active: 2004-2022

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8 patents (USPTO):Explore Patents

Title: The Innovations of Takayuki Sato

Introduction

Takayuki Sato is a prominent inventor based in Aichi-ken, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of eight patents. His work focuses on the production and enhancement of Group III nitride semiconductors, which are crucial for various electronic applications.

Latest Patents

One of his latest patents is a method for producing a Group III nitride semiconductor by controlling the oxygen concentration of the furnace internal atmosphere. This invention addresses the issue of anomalous growth of a Group III nitride semiconductor at the periphery of a seed substrate. The method involves feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace. The oxygen concentration of the furnace internal atmosphere is carefully controlled during the growth process to ensure optimal results.

Another notable patent is for a method of producing a Group III nitride-based compound semiconductor, wafer, and Group III nitride-based compound semiconductor device. This method utilizes a sapphire substrate with a specific inclination to achieve desired growth characteristics. The process includes forming AlN buffer layers and a GaN layer, ensuring that the growth aligns with the substrate's orientation for enhanced performance.

Career Highlights

Throughout his career, Takayuki Sato has worked with notable companies such as Toyoda Gosei Co., Ltd. and NGK Insulators, Inc. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to innovative solutions in the industry.

Collaborations

Takayuki has collaborated with esteemed colleagues, including Seiji Nagai and Shiro Yamazaki. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in semiconductor research.

Conclusion

Takayuki Sato's contributions to semiconductor technology through his innovative patents and collaborations highlight his significant role in the field. His work continues to influence advancements in the production of Group III nitride semiconductors, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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