The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Feb. 29, 2008
Seiji Nagai, Aichi-ken, JP;
Shiro Yamazaki, Aichi-ken, JP;
Takayuki Sato, Aichi-ken, JP;
Katsuhiro Imai, Aichi-ken, JP;
Makoto Iwai, Aichi-ken, JP;
Takatomo Sasaki, Osaka-fu, JP;
Yusuke Mori, Osaka-fu, JP;
Fumio Kawamura, Osaka-fu, JP;
Seiji Nagai, Aichi-ken, JP;
Shiro Yamazaki, Aichi-ken, JP;
Takayuki Sato, Aichi-ken, JP;
Katsuhiro Imai, Aichi-ken, JP;
Makoto Iwai, Aichi-ken, JP;
Takatomo Sasaki, Osaka-fu, JP;
Yusuke Mori, Osaka-fu, JP;
Fumio Kawamura, Osaka-fu, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-gun, Aichi-ken, JP;
Abstract
Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction.