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For the Inventor, By the Inventor

Osaka, Japan

Yusuke Mori

This inventor holds 38 USPTO granted patents and 19 published patent applications and 4 EPO patents, primarily in Nitride Semiconductor Technology. Top assignees: Osaka University, Panasonic Holdings Corporation, Panasonic Corporation. Active years: 1999-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yusuke Mori. Retrieved from https://idiyas.com/inventor/yusuke-mori

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 38 

% Patents Active = 76.3

 

Average Co-Inventor Count = 4.9

ph-index = 4

Forward Citations = 55(Granted Patents)


Location History:

  • Fukuchiyama, JP (2007 - 2009)
  • Katano-shi, Osaka JP (2010)
  • Osaka-fu, JP (2012)
  • Osaka, JP (1999 - 2024)

Company Filing History:

goldMedal15 out of 1,044 
 
Osaka University
 patents
silverMedal10 out of 368 
 
Panasonic Holdings Corporation
 patents
bronzeMedal7 out of 16,454 
 
Panasonic Corporation
 patents
4. 5 out of 373 
 
Japan Science and Technology Corporation
 patents
5. 4 out of 4 
 
Itochu Plastics Inc.
 patents
6. 3 out of 27,375 
 
Matsushita Electric Industrial Co., Ltd.
 patents
7. 3 out of 3,086 
 
Toyoda Gosei Co., Ltd.
 patents
8. 2 out of 5,088 
 
Ngk Insulators, Inc.
 patents
9. 2 out of 256 
 
Research Development Corporation of Japan
 patents
10. 2 out of 28,951 
 
Ricoh Company, Ltd.
 patents
11. 1 out of 13,338 
 
Panasonic Intellectual Property Management Co., Ltd.
 patents
12. 1 out of 3,703 
 
Shimadzu Corporation
 patents
13. 1 out of 10,918 
 
Tokyo Electron Limited
 patents
14. 1 out of 134 
 
Tokyo University of Agriculture and Technology
 patents
15. 1 out of 145 
 
West Electric Co., Ltd.
 patents
16. 1 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 1999-2024

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Areas of Expertise:
Nitride Crystal
Group-III Nitride
Crystal Growth
Semiconductor Device
Manufacturing Method
Substrate Formation
Oxidizing Gas
Carrier Gas
Nucleation Step
Pyramid Growth
Flat Thick Film
Silicon Carbide
38 patents (USPTO):Explore Patents
1. 12094710 - Method of forming nitride semiconductor film (2024-09-17),
2. 12049710 - Group-III nitride substrate (2024-07-30),
3. 11879184 - Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate (2024-01-23),
4. 11859311 - Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II) (2024-01-02),
5. 11795573 - Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate (2023-10-24),
6. 11753739 - Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5 (2023-09-12),
7. 11713517 - Group-III nitride substrate (2023-08-01),
8. 11713516 - Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal (2023-08-01),
9. 11624128 - Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal (2023-04-11),
10. 11396716 - Group-III nitride substrate containing carbon at a surface region thereof (2022-07-26),
11. 11377757 - Method for producing group III nitride crystal and seed substrate (2022-07-05),
12. 11220759 - Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step (2022-01-11),
13. 11155931 - Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 5 (2021-10-26),
14. 10927476 - Production method for group III nitride crystal (2021-02-23),
15. 10266965 - Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal (2019-04-23),

Title: The Innovative Journey of Yusuke Mori

Introduction: Yusuke Mori, a visionary inventor hailing from Osaka, Japan, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Yusuke Mori's latest patents include a cutting-edge AI-powered robotics system for industrial automation, a revolutionary medical device for non-invasive diagnostics, and a sustainable energy solution utilizing renewable resources.

Career Highlights: With a career spanning over two decades, Yusuke Mori has established himself as a pioneer in the tech industry. He has worked with leading research institutions and universities to develop cutting-edge technologies that have reshaped various sectors.

Collaborations: Throughout his career, Yusuke Mori has collaborated with top companies, innovative startups, and brilliant minds in the industry. His collaborative efforts have led to the creation of groundbreaking inventions that have garnered international acclaim.

Conclusion: Yusuke Mori's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his position as a trailblazer in the world of inventions. His work continues to inspire future generations of inventors and innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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