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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10266965 B1

PDFFull Text
Date of Patent:
Apr. 23, 2019

Filed:

Feb. 26, 2015

Method for producing group-iii nitride crystal, group-iii nitride crystal, semiconductor device, and device for producing group-iii nitride crystal

Applicants:

Osaka University, Suita-shi, Osaka, JP;

Itochu Plastics Inc., Tokyo, JP;

Inventors:

Yusuke Mori, Osaka, JP;

Masashi Yoshimura, Osaka, JP;

Mamoru Imade, Osaka, JP;

Masashi Isemura, Tokyo, JP;

Akira Usui, Tokyo, JP;

Masatomo Shibata, Tokyo, JP;

Takehiro Yoshida, Tokyo, JP;

Assignees:

Osaka University, Osaka, JP;

Itochu Plastics Inc., Tokyo, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

Robert M Kunemund

Int. Cl.
CPC ...
C30B 19/02 (2006.01); C30B 29/40 (2006.01); C30B 25/20 (2006.01); C30B 29/38 (2006.01); H01L 21/02 (2006.01); B28D 5/00 (2006.01); C30B 19/06 (2006.01); C30B 25/18 (2006.01); C30B 33/00 (2006.01); H01L 21/78 (2006.01); H01L 29/20 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01S 5/30 (2006.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); B28D 5/00 (2013.01); C30B 19/02 (2013.01); C30B 19/061 (2013.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); C30B 29/38 (2013.01); C30B 33/00 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02516 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02581 (2013.01); H01L 21/02625 (2013.01); H01L 21/02642 (2013.01); H01L 21/02647 (2013.01); H01L 21/7813 (2013.01); H01L 29/2003 (2013.01); H01L 33/007 (2013.01); H01L 33/0079 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01S 5/3013 (2013.01); H01S 2304/06 (2013.01);
Abstract

A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystalby liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystalon the first crystalby vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals(preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystalsto produce a first crystal

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