This inventor holds 38 USPTO granted patents and 7 published patent applications and 1 EPO patent, primarily in Nitride Semiconductor Substrates. Top assignees: Hitachi Cable, Inc., Sumitomo Chemical Company, Limited, Nec Corporation. Active years: 2001-2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Tsuchiura, JP (2001 - 2012)
- Tokyo, JP (2004 - 2019)
- Hitachi, JP (2018 - 2019)
- Ibaraki, JP (2005 - 2023)
Company Filing History:
23 out of 836 
12 out of 6,964 
5 out of 36,718 
Years Active: 2001-2026
Areas of Expertise:
Title: Masatomo Shibata: Innovator in Group III Nitride Technologies
Introduction
Masatomo Shibata, an accomplished inventor based in Tokyo, Japan, holds an impressive portfolio of 35 patents. His contributions primarily focus on advancements in Group III nitride technologies, significantly impacting the field of semiconductors.
Latest Patents
Among his latest innovations is a patented technology for a Group III nitride crystal substrate, featuring a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 meters or more. This patent details a method of manufacturing a crystal substrate that includes preparing a first crystal body made of a single crystal of Group III nitride, curved in a concave spherical shape, and growing a second crystal body on it.
Additionally, he has developed a gallium nitride laminated substrate and a semiconductor device, which includes an n-type gallium nitride layer and a p-type gallium nitride layer forming a pn-junction. This invention addresses the breakdown phenomena in the p-type gallium nitride layer, demonstrating Shibata's ongoing commitment to enhancing semiconductor devices.
Career Highlights
Masatomo Shibata has made significant strides in his professional career, serving notable companies such as Hitachi Cable, Inc. and Sumitomo Chemical Company, Limited. His work has been instrumental in pushing the boundaries of semiconductor manufacturing and application.
Collaborations
Throughout his career, Shibata has collaborated with esteemed colleagues like Yuichi Oshima and Takehiro Yoshida. These partnerships have allowed for the exchange of ideas and fostering innovation in the technologies they develop, further enhancing their impact on the industry.
Conclusion
Masatomo Shibata's achievements in the field of Group III nitride technologies and his continuous pursuit of innovation have established him as a leading figure in semiconductor research. His patents not only contribute to the scientific community but also pave the way for future advancements in electronics and materials science.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile