The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Oct. 20, 2017
Applicants:

Sciocs Company Limited, Hitachi-shi, Ibaraki, JP;

Sumitomo Chemical Company, Limited, Tokyo, JP;

Inventors:

Toshio Kitamura, Hitachi, JP;

Masatomo Shibata, Hitachi, JP;

Takehiro Yoshida, Hitachi, JP;

Assignees:

Sciocs Company Limited, Hitachi-shi, Ibaraki, JP;

Sumitomo Chemical Company, Limited, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B23K 26/382 (2014.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); B23K 26/00 (2014.01); B23K 26/402 (2014.01); B23K 26/352 (2014.01); C30B 33/04 (2006.01); H01L 21/66 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02032 (2013.01); B23K 26/0006 (2013.01); B23K 26/352 (2015.10); B23K 26/382 (2015.10); B23K 26/402 (2013.01); C30B 25/20 (2013.01); C30B 29/406 (2013.01); C30B 33/04 (2013.01); B23K 2101/40 (2018.08); H01L 22/12 (2013.01); H01L 22/20 (2013.01);
Abstract

There is provided a method for manufacturing a group-III nitride substrate, including: (a) preparing a substrate which is made of a group III-nitride crystal and which has a high oxygen concentration domain where an oxygen concentration is higher than that of a matrix of the crystal; (b) irradiating the substrate with laser beam aiming at the high oxygen concentration domain, forming a through-hole penetrating the substrate in a thickness direction, and removing at least a part of the high oxygen concentration domain from the substrate; and (c) embedding at least a part of an inside of the through-hole by growing the group-III nitride crystal in the through-hole.


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