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Sciocs Company Limited

USPTO Granted Patents = 41

% Expired Patents = 12.2

EPO Patents = 1

Forward Citations = 12

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41 inventors (with patents filed for the assignee):

Fumimasa Horikiri (18 out of 53 patents)

Takehiro Yoshida (10 out of 289 patents)

Hajime Fujikura (9 out of 47 patents)

4. Masatomo Shibata (5 out of 38 patents)

5. Tomoyoshi Mishima (4 out of 21 patents)

6. Kazutoshi Watanabe (4 out of 80 patents)

7. Kenji Shibata (4 out of 88 patents)

8. Kazufumi Suenaga (3 out of 48 patents)

9. Taichiro Konno (3 out of 15 patents)

10. Hiroshi Ohta (3 out of 76 patents)

11. Yoshinobu Narita (3 out of 8 patents)

12. Akira Nomoto (3 out of 17 patents)

13. Noboru Fukuhara (3 out of 31 patents)

14. Yasuhiro Yamamoto (2 out of 2 patents)

15. Masahiro Hayashi (2 out of 28 patents)

Core Competencies:

Nitride Crystal

Semiconductor Device

GaN Laminate

Piezoelectric Element

Crystal Growth

Epitaxial Wafer

Thin Film

Manufacturing Method

N-type Semiconductor

P-type Semiconductor

Hydride Vapor Phase Epitaxy

Laminated Substrate

41 patents: Sort by Forward Citations

1. 12527226 - Laminated substrate with piezoelectric thin film, piezoelectric thin film element and method for manufacturing this element (2026-01-13),

2. 11473907 - Method for manufacturing semiconductor structure, inspection method, and semiconductor structure (2022-10-18),

3. 11393693 - Structure manufacturing method and intermediate structure (2022-07-19),

4. 11380765 - Structure and intermediate structure (2022-07-05),

5. 11377756 - Nitride crystal substrate and method for manufacturing the same (2022-07-05),

6. 11342220 - Structure manufacturing method and manufacturing device, and light irradiation device (2022-05-24),

7. 11342191 - Structure manufacturing method, structure manufacturing apparatus and intermediate structure (2022-05-24),

8. 11339500 - Nitride crystal substrate, semiconductor laminate, method of manufacturing semiconductor laminate and method of manufacturing semiconductor device (2022-05-24),

9. 11339053 - Nitride crystal (2022-05-24),

10. 11289322 - Structure manufacturing method including surface photoelectrochemical etching and structure manufacturing device (2022-03-29),

11. 11094539 - Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrate (2021-08-17),

12. 11075077 - Nitride semiconductor template and nitride semiconductor device (2021-07-27),

13. 11008671 - Nitride crystal (2021-05-18),

14. 10998188 - Gallium nitride laminated substrate and semiconductor device (2021-05-04),

15. 10978296 - Nitride semiconductor substrate, semiconductor laminate, laminated structure, method for manufacturing nitride semiconductor substrate and method for manufacturing semiconductor laminate (2021-04-13),

Sciocs Company Limited, based in Hitachi, Japan, specializes in advanced semiconductor technologies, focusing on the development and manufacturing of nitride semiconductor materials. The company is recognized for its expertise in gallium nitride and nitride crystal substrates, which are essential for high-performance electronic devices. Sciocs is also engaged in crystal growth and the production of epitaxial wafers, contributing to innovations in piezoelectric devices and n-type semiconductors, thereby supporting various applications in the electronics industry.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Sep 29 2026

41 Patents

#3 in Hitachi

#1,940 in Japan

#16,669 in the World

Sciocs Company Limited

Forward Citations = 12

41 inventors:

Fumimasa Horikiri (18 out of 53 patents)

Takehiro Yoshida (10 out of 289 patents)

Hajime Fujikura (9 out of 47 patents)

4. Masatomo Shibata (5 out of 38 patents)

5. Tomoyoshi Mishima (4 out of 21 patents)

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