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Sciocs Company Limited

USPTO Granted Patents = 40

EPO Patents = 1

Forward Citations = 11

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41 inventors (with patents filed for the assignee):

Fumimasa Horikiri (17 out of 52 patents)

Takehiro Yoshida (10 out of 287 patents)

Hajime Fujikura (9 out of 47 patents)

4. Masatomo Shibata (5 out of 36 patents)

5. Tomoyoshi Mishima (4 out of 21 patents)

6. Kazufumi Suenaga (3 out of 46 patents)

7. Taichiro Konno (3 out of 15 patents)

8. Hiroshi Ohta (3 out of 76 patents)

9. Kazutoshi Watanabe (3 out of 75 patents)

10. Yoshinobu Narita (3 out of 6 patents)

11. Kenji Shibata (3 out of 83 patents)

12. Akira Nomoto (3 out of 17 patents)

13. Noboru Fukuhara (3 out of 31 patents)

14. Yasuhiro Yamamoto (2 out of 2 patents)

15. Masahiro Hayashi (2 out of 28 patents)

40 patents: Sort by Forward Citations

1. 11473907 - Method for manufacturing semiconductor structure, inspection method, and semiconductor structure (2022-10-18),

2. 11393693 - Structure manufacturing method and intermediate structure (2022-07-19),

3. 11380765 - Structure and intermediate structure (2022-07-05),

4. 11377756 - Nitride crystal substrate and method for manufacturing the same (2022-07-05),

5. 11342220 - Structure manufacturing method and manufacturing device, and light irradiation device (2022-05-24),

6. 11342191 - Structure manufacturing method, structure manufacturing apparatus and intermediate structure (2022-05-24),

7. 11339500 - Nitride crystal substrate, semiconductor laminate, method of manufacturing semiconductor laminate and method of manufacturing semiconductor device (2022-05-24),

8. 11339053 - Nitride crystal (2022-05-24),

9. 11289322 - Structure manufacturing method including surface photoelectrochemical etching and structure manufacturing device (2022-03-29),

10. 11094539 - Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrate (2021-08-17),

11. 11075077 - Nitride semiconductor template and nitride semiconductor device (2021-07-27),

12. 11008671 - Nitride crystal (2021-05-18),

13. 10998188 - Gallium nitride laminated substrate and semiconductor device (2021-05-04),

14. 10978296 - Nitride semiconductor substrate, semiconductor laminate, laminated structure, method for manufacturing nitride semiconductor substrate and method for manufacturing semiconductor laminate (2021-04-13),

15. 10978294 - Semi-insulating crystal, N-type semiconductor crystal and P-type semiconductor crystal (2021-04-13),

SCIOCS COMPANY LIMITED is a technology company specializing in the design, development, and manufacturing of advanced semiconductor devices. With a focus on providing high-performance and high-quality products, SCIOCS serves various industries including telecommunications, automotive, consumer electronics, and industrial sectors. Through innovative research and development, SCIOCS aims to contribute to the advancement of society by delivering cutting-edge solutions to meet the evolving needs of its clients worldwide.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

40 Patents

#4 in Hitachi

#1,933 in Japan

#16,545 in the World

Sciocs Company Limited

Forward Citations = 11

41 inventors:

Fumimasa Horikiri (17 out of 52 patents)

Takehiro Yoshida (10 out of 287 patents)

Hajime Fujikura (9 out of 47 patents)

4. Masatomo Shibata (5 out of 36 patents)

5. Tomoyoshi Mishima (4 out of 21 patents)

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