The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Jul. 29, 2019
Applicants:
Sciocs Company Limited, Ibaraki, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Inventors:
Assignees:
SCIOCS COMPANY LIMITED, Ibaraki, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 21/06 (2006.01); C30B 25/02 (2006.01);
U.S. Cl.
CPC ...
C01B 21/0632 (2013.01); C01P 2006/40 (2013.01); C01P 2006/80 (2013.01);
Abstract
An object of the present invention is to improve quality of a nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal in which a composition formula is represented by InAlGaN (satisfying 0≤x≤1, 0≤y≤1, 0≤x+y≤1), and the concentration of B in the crystal is less than 1×10at/cm, and each of the concentrations of O and C in the crystal is less than 1×10at/cmin a region of 60% or more of a main surface.