Tokyo, Japan

Tomoyoshi Mishima

This inventor holds 21 USPTO granted patents and 3 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Hitachi, Ltd., Sumitomo Chemical Company, Limited, Hosei University. Active years: 1987-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomoyoshi Mishima. Retrieved from https://idiyas.com/inventor/tomoyoshi-mishima

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 81.0

 

Average Co-Inventor Count = 4.0

ph-index = 7

Forward Citations = 185(Granted Patents)


Location History:

  • Shiki, JP (1987 - 2016)
  • Koganei, JP (2019 - 2020)
  • Tokyo, JP (2015 - 2023)

Company Filing History:


Years Active: 1987-2023

Loading Chart...
Loading Chart...
Areas of Expertise:
Crystal Laminate
Gallium Nitride
Semiconductor Device
Field-Effect Transistor
Optical Transmitter
Hetero-Junction Bipolar Transistor
Multilayer Structure
Strained Superlattice
Compound Semiconductor
Lattice-Mismatched Structures
Photo Module
Rectifying Device
21 patents (USPTO):Explore Patents

Title: The Innovative Journey of Tomoyoshi Mishima: A Pioneer in Semiconductor Technology

Introduction: Tomoyoshi Mishima, located in Tokyo, Japan, is a distinguished inventor known for his contributions to semiconductor technology. With a remarkable portfolio of 21 patents, Mishima has made significant advancements in the field, particularly focusing on crystal laminates and gallium nitride-based devices.

Latest Patents: Among his latest inventions, Mishima has developed a series of innovative patents, including a crystal laminate and a semiconductor device. The crystal laminate comprises a crystal substrate formed from a monocrystal of group III nitride (InAlGaN), several n-type impurities such as Si, Ge, and O, and a crystal layer epitaxially grown over the substrate. The design ensures that the absorption coefficient falls within a specific range when subjected to light irradiation. Additionally, his gallium nitride laminated substrate features an n-type layer, a p-type layer that forms a pn-junction, and an intermediate level layer designed to suppress overcurrent during breakdown events. These inventions demonstrate his expertise in enhancing semiconductor performance.

Career Highlights: Tomoyoshi Mishima's career includes tenures at renowned companies such as Hitachi, Ltd. and Sumitomo Chemical Company, Limited. Throughout his impressive journey, he has played a pivotal role in developing innovative solutions that push the boundaries of semiconductor technology. His extensive experience and dedication have led to several patents that are advantageous for the industry.

Collaborations: Throughout his career, Mishima has collaborated with talented individuals in the field, including notable coworkers Fumimasa Horikiri and Makoto Kudo. Their collective efforts in research and development have further advanced the capabilities of semiconductor devices and materials.

Conclusion: Tomoyoshi Mishima's innovative contributions have had a lasting impact on the semiconductor industry. His 21 patents reflect his commitment to excellence and his ability to develop groundbreaking technologies. As he continues to work on innovative solutions, Mishima remains a pivotal figure in the realm of semiconductor research and application.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…