The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Jun. 27, 2017
Hosei University, Tokyo, JP;
Sciocs Company Limited, Ibaraki, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Tomoyoshi Mishima, Tokyo, JP;
Fumimasa Horikiri, Ibaraki, JP;
HOSEI UNIVERSITY, Tokyo, JP;
SCIOCS COMPANY LIMITED, Ibaraki, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
A semiconductor device is included a first semiconductor layer with n-type conductivity, containing a gallium nitride-based semiconductor, a second semiconductor layer with p-type conductivity, which is laminated directly on the first semiconductor layer and contains a gallium nitride-based semiconductor added with a p-type impurity at a concentration of 1×10cmor more, a first electrode disposed in contact with the first semiconductor layer, and a second electrode disposed in contact with the second semiconductor layer, and the semiconductor device functions as a pn-junction diode.