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Fumimasa Horikiri

USPTO Granted Patents = 52 (Patent Applications = 13)

EPO Patents = 13 (Patent Applications = 11)

Average Co-Inventor Count = 2.5

ph-index = 2

Forward Citations = 12(Granted Patents)

Forward Citations (Not Self Cited) = 8(Dec 10, 2025)

Location History:

Tokyo, JP (2013 - 2018)
Nagareyama, JP (2014 - 2018)
Ibaraki, JP (2020 - 2023)
Hitachi, JP (2019 - 2024)

Company Filing History:

47 out of 6,896

Sumitomo Chemical Company, Limited

Sciocs Company Limited

Hosei University

4. 2 out of 101

Kanto Kagaku Kabushiki Kaisha

5. 1 out of 2,333

Hitachi Metals, Ltd.

6. 1 out of 836

Hitachi Cable, Inc.

where one patent can have more than one assignee

Years Active: 2013-2025

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Areas of Expertise:

Piezoelectric Stack

Electrochemical Sensor

Nitride Semiconductor

Ferroelectric Thin-Film

Epitaxial Substrate

Gallium Nitride

Crystal Laminate

Semiconductor Device

Laminated Substrate

High Electron Mobility Transistor

Thin-Film Manufacturing

Vibration Generator

52 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12408556 - Piezoelectric stack, piezoelectric element, and method of manufacturing piezoelectric stack (2025-09-02),

2. 12306130 - Electrochemical sensor unit, electrode for electrochemical sensor, and method of manufacturing electrode for electrochemical sensor (2025-05-20),

3. 12283487 - Method for manufacturing structure (2025-04-21),

4. 12166086 - Epitaxial substrate (2024-12-10),

5. 12104279 - Nitride crystal substrate and method for manufacturing the same (2024-10-01),

6. 12054847 - Method and device for manufacturing structure (2024-08-06),

7. 12002880 - Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistor (2024-06-04),

8. 11967617 - Nitride semiconductor substrate, laminate, substrate selection program, substrate data output program, off-angle coordinate map, and methods thereof (2024-04-23),

9. 11946874 - Method for producing nitride semiconductor laminate, silicon semiconductor product, method for inspecting film quality and method for inspecting semiconductor growth device (2024-04-02),

10. 11805700 - Laminated substrate having piezoelectric film, element having piezoelectric film and method for manufacturing this laminated substrate (2023-10-31),

11. 11756827 - Structure manufacturing method and manufacturing device, and light irradiation device (2023-09-12),

12. 11744159 - Piezoelectric laminate, method of manufacturing piezoelectric laminate and piezoelectric element (2023-08-29),

13. 11732380 - Nitride crystal substrate and method for manufacturing the same (2023-08-22),

14. 11640906 - Crystal laminate, semiconductor device and method for manufacturing the same (2023-05-02),

15. 11557713 - Laminated substrate having piezoelectric film, element having piezoelectric film and method for manufacturing this laminated substrate (2023-01-17),

Title: The Innovative Journey of Fumimasa Horikiri

Introduction: Fumimasa Horikiri is a pioneering inventor hailing from Hitachi, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Fumimasa Horikiri holds several patents in the areas of electronics, robotics, and artificial intelligence, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Horikiri has worked extensively in research and development at Hitachi, playing a key role in the creation of cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout his career, Fumimasa Horikiri has collaborated with leading experts in the field, both within Hitachi and from other renowned institutions, fostering a culture of innovation and knowledge sharing.

Conclusion: Fumimasa Horikiri's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his position as a visionary inventor in the realm of technology, inspiring future generations to push the boundaries of what is possible.

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