The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2024

Filed:

Aug. 08, 2018
Applicant:

Sumitomo Chemical Company, Limited, Tokyo, JP;

Inventors:

Fumimasa Horikiri, Hitachi, JP;

Takehiro Yoshida, Hitachi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/38 (2006.01); C23C 16/34 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); C23C 16/34 (2013.01); C30B 25/18 (2013.01); C30B 29/38 (2013.01); C30B 29/40 (2013.01); H01L 21/02293 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01);
Abstract

A nitride semiconductor substrate including a group III nitride semiconductor crystal and having a main surface, wherein a low index crystal plane is (0001) plane curved in a concave spherical shape to the main surface, and the off-angle (θ, θ) at a position (x, y) in the main surface approximated by x representing a coordinate in a direction along <1-100> axis, y is a coordinate in a direction along <11-20> axis, (0, 0) represents a coordinate (x, y) of the center, θrepresents a direction component along <1-100> axis in an off-angle of <0001> axis with respect to a normal, θrepresents a direction component along <11-20> axis in the off-angle, (M, A) represents a rate of change in the off-angle (θ, θ) with respect to the position (x, y) in the main surface, and (M, A) represents the off-angle (θ, θ) at the center.


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