Sumitomo Chemical Company, Limited

Sciocs Company Limited

Hosei University

Kanto Kagaku Kabushiki Kaisha

Hitachi Metals, Ltd.

Hitachi Cable, Inc.

Fumimasa Horikiri

Kenji Shibata

Kazutoshi Watanabe

Kazufumi Suenaga

Masaki Noguchi

Akira Nomoto

Noboru Fukuhara

Takehiro Yoshida

Tomoyoshi Mishima

Hiroshi Ohta

Kenji Kuroiwa

Tohru Nakamura

Masatomo Shibata

Yasuhiro Yamamoto

Hajime Fujikura

Takeshi Kimura

Yohei Otoki

Yoshinobu Narita

Masachika Toguchi

Kenji Shiojima

Hiroyuki Endo

Kaori Kurihara

Taketomo Sato

Suenaga Kazufumi

A piezoelectric stack, including: a substrate; an electrode film; and a piezoelectric film comprising an alkali niobium oxide of a perovskite structure represented by a composition formula of (KNa)NbO(0<x<1), wherein an average light transmittance through the piezoelectric film in a wavelength region of visible light and near-infrared ray is 65% or more.

Piezoelectric stack, piezoelectric element, and method of manufacturing piezoelectric stack

An electrochemical sensor unit including: a working electrode; and a counter electrode, wherein the working electrode includes a diamond film which generates a redox reaction on a surface when a voltage is applied between the working electrode and the counter electrode, and a support which is formed of a material different from diamond and supports the diamond film, when the working electrode is viewed laterally, in the support, a width of a surface opposite to a surface in contact with the diamond film is smaller than a width of the diamond film, and a liquid test sample is supplied to the working electrode from the diamond film side.

Electrochemical sensor unit, electrode for electrochemical sensor, and method of manufacturing electrode for electrochemical sensor

There is provided a method for manufacturing a structure, including:

Method for manufacturing structure

There is provided an epitaxial substrate, including: a GaN substrate whose main surface is a c-plane; and a GaN layer epitaxially grown on the main surface, wherein the main surface includes a region where an off-angle is 0.4° or more, and an E3 trap concentration in the GaN layer grown on the region is 3.0×10cmor less.

Epitaxial substrate

There is provided a nitride crystal substrate constituted by group-III nitride crystal, containing n-type impurities, with an absorption coefficient α being approximately expressed by equation (1) by a least squares method in a wavelength range of at least 1 μm or more and 3.3 μm or less.

Nitride crystal substrate and method for manufacturing the same

A method for manufacturing a structure, including photoelectrochemically etching an etching object, the photoelectrochemical etching of the etching object including: injecting an alkaline or acidic etching solution containing an oxidizing agent that receives electrons, into a rotatably held container in which an etching object at least whose surface is composed of group III nitride is held, and immersing the surface in the etching solution; irradiating the surface of the etching object held in the container with light in a stationary state of the etching object and the etching solution; and rotating the container to scatter the etching solution toward an outer peripheral side, thereby discharging the etching solution from the container, after the surface is irradiated with the light.

Method and device for manufacturing structure

There is provided a method for manufacturing a nitride-based high electron mobility transistor, including: providing a conductive member on a nitride semiconductor crystal substrate, outside an element region in a plan view; forming a mask on the substrate, the mask having an opening in at least one of a source recess etching region and a drain recess etching region; performing photoelectrochemical etching by irradiating the substrate with light to form at least one of a source recess and a drain recess, in a state where the substrate on which the conductive member is provided and the mask is formed is in contact with an etching solution containing an oxidizing agent that receives electrons; and forming an element separation structure of the high electron mobility transistor.

Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistor

A nitride semiconductor substrate including a group III nitride semiconductor crystal and having a main surface, wherein a low index crystal plane is (0001) plane curved in a concave spherical shape to the main surface, and the off-angle (θ, θ) at a position (x, y) in the main surface approximated by x representing a coordinate in a direction along <1-100> axis, y is a coordinate in a direction along <11-20> axis, (0, 0) represents a coordinate (x, y) of the center, θrepresents a direction component along <1-100> axis in an off-angle of <0001> axis with respect to a normal, θrepresents a direction component along <11-20> axis in the off-angle, (M, A) represents a rate of change in the off-angle (θ, θ) with respect to the position (x, y) in the main surface, and (M, A) represents the off-angle (θ, θ) at the center.

Nitride semiconductor substrate, laminate, substrate selection program, substrate data output program, off-angle coordinate map, and methods thereof

There is provided a method for producing a nitride semiconductor laminate in which a thin film is homoepitaxially grown on a substrate comprising group III nitride semiconductor crystals, the method including: homoepitaxially growing a thin film on a substrate, using the substrate in which a dislocation density on its main surface is 5×10pieces/cmor less, a concentration of oxygen therein is less than 1×10at·cm, and a concentration of impurities therein other than n-type impurity is less than 1×10at ·cm; and inspecting a film quality of the thin film formed on the substrate, wherein in the inspection of the film quality, the film quality of the thin film is inspected by detecting a deviation of an amount of reflected light at a predetermined wavenumber determined in a range of 1,600 cmor more and 1,700 cmor less in a reflection spectrum obtained by irradiating the thin film on the substrate with infrared light, from an amount of reflected light at the predetermined wavenumber determined according to a film thickness of the thin film, a carrier concentration of the substrate, and a carrier concentration of the thin film.

Method for producing nitride semiconductor laminate, silicon semiconductor product, method for inspecting film quality and method for inspecting semiconductor growth device

There is provided a laminated substrate having a piezoelectric film, including: a substrate; a first electrode film provided on the substrate; and a piezoelectric film provided on the first electrode film, wherein an oxide film containing an oxide represented by a composition formula of RuOor IrO, is provided on the piezoelectric film.

Laminated substrate having piezoelectric film, element having piezoelectric film and method for manufacturing this laminated substrate

There is provided a structure manufacturing method, including: preparing a wafer at least whose surface comprises Group III nitride crystal in a state of being immersed in an etching solution containing peroxodisulfate ions; and irradiating the surface of the wafer with light through the etching solution; wherein the group III nitride crystal has a composition in which a wavelength corresponding to a band gap is 310 nm or more, and during irradiation of the light, the surface of the wafer is irradiated with a first light having a wavelength of 200 nm or more and less than 310 nm under a first irradiation condition, and is irradiated with a second light having a wavelength of 310 nm or more and less than a wavelength corresponding to the band gap under a second irradiation condition controlled independently of the first irradiation condition.

Structure manufacturing method and manufacturing device, and light irradiation device

There is provided a piezoelectric laminate, including: a substrate; and a piezoelectric film formed on the substrate, wherein the piezoelectric film contains an alkali niobium oxide represented by a composition formula of (KNa)NbO(0&#x3c;x&#x3c;1), having a perovskite structure, and contains a metallic element selected from a group consisting of Cu and Mn at a concentration of more than 0.6 at % and 2.0 at % or less.

Piezoelectric laminate, method of manufacturing piezoelectric laminate and piezoelectric element

There is provided a nitride crystal substrate having a main surface and formed of group-III nitride crystal, wherein N/N, satisfies formula (1) below, which is a ratio of a carrier concentration Nat a center of the main surface relative to a carrier concentration N: 0.5&#x2264;N/N&#x2264;1.5 . . . (1) where Nis the carrier concentration on the main surface side of the nitride crystal substrate obtained based on a reflectance of the main surface measured by a reflection type Fourier transform infrared spectroscopy, and Nis the carrier concentration in the nitride crystal substrate obtained based on a specific resistance of the nitride crystal substrate and a mobility of the nitride crystal substrate measured by an eddy current method.

Provided is a crystal laminate including: a crystal substrate formed from a monocrystal of group III nitride expressed by a compositional formula InAlGaN (where 0&#x2264;x&#x2264;1, 0&#x2264;y&#x2264;1, 0&#x2264;x+y&#x2264;1), the crystal substrate containing at least any one of n-type impurity selected from the group consisting of Si, Ge, and O; and a crystal layer formed by a group III nitride crystal epitaxially grown on a main surface of the crystal substrate, at least any one of p-type impurity selected from the group consisting of C, Mg, Fe, Be, Zn, V, and Sb being ion-implanted in the crystal layer. The crystal laminate is configured in a manner such that an absorption coefficient of the crystal substrate for light with a wavelength of 2000 nm when the crystal substrate is irradiated with the light falls within a range of 1.8 cmor more and 4.6 cmor less under a temperature condition of normal temperature.

Crystal laminate, semiconductor device and method for manufacturing the same

There is provided a laminated substrate having a piezoelectric film, including: a substrate; and a piezoelectric film provided on the substrate interposing a base film, wherein the piezoelectric film has an alkali niobium oxide based perovskite structure represented by a composition formula of (KNa)NbO(0&#x3c;x&#x3c;1) and preferentially oriented in (001) plane direction, and a sound speed of the piezoelectric film is 5100 m/s or more.

Growing community of inventors

Hitachi, Japan

Fumimasa Horikiri